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液相法 SiC 单晶炉
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Guangzhou YS Semiconductor Equipment Co., Ltd.
Guangzhou YS Semiconductor Equipment Co., Ltd. icon
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Guangzhou YS Semiconductor Equipment Co., Ltd.
Guangzhou YS Semiconductor Equipment Co., Ltd. icon
China
Main Products:
Silicon carbide epitaxy equipment, silicon carbide crystal growth equipment
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Product information

Equipment name: Liquid Phase SIC Single Crystal Furnace Equipment Model: YS-C08S01 equipment size: L1300 × W1300 × H3600MM applicable process: LPE method (compatible with PVT method) Long Crystal Size: 6 inch compatible 8 inch main furnace cavity: stainless steel seed/Crucible lift stroke: 200mm seed/crucible rotation speed range: 0.1-200rpm heating temperature range: 800 ° C ~ 2800 ° C equipment features: 1, high vacuum, 2,3,4,5,5,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6,6 High-quality pump body, seal design, the components are closely combined to ensure long crystal environment; 2, high-precision, high-quality electronic control system, transmission system, components, to ensure the precision and operation stability of equipment; 3, independent development, with independent intellectual property rights, production and manufacturing without constraints, supply stability, can accept custom. 4. It has passed the certification of domestic well-known SIC substrate company and is compatible with 8-inch ingot

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