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Laser Induced Epitaxial Growth
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LasTop Technology
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LasTop Technology
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China
Main Products:
Wafer laser annealing, wafer laser marking, wafer laser debonding, wafer laser slotting, wafer laser slicing, wafer level laser marking, fully automatic laser glue removal, IC fully automatic laser marking, frame laser marking, and three light spot inspection
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Product information

Laser Induced Epitaxial Growth | LIEG

Application

Laser-induced epitaxial growth
and void elimination of amorphous
silicon in ultra-small via with large
aspect ratio

Product Features

First domestic 12 inch mass production equipment

High precise beam combination technology and modulation technology for Multi- laser

Rectangular Top-hat beam with large size, high productivity

Energy density  accuracy down to 5mJ/cm2

Technical specification 
Laser wavelength532nm
Wafer size12 inch
Energy Density accuracy5mJ/cm2
Uniformity of beam top≤1%
Focal depth range5mm
Process EffectCrystallization and void elimination
All products in the store
Strip Laser MarkingAll products in the store
IC framework Laser MarkingAll products in the store
Laser DebondingAll products in the store
Wafer Laser Marking All products in the store
Laser DecappingAll products in the store
Fiber Laser High Speed MarkingAll products in the store