SUMEC TOUCH WORLD

It is suitable for 6/8 inches silicon carbide crystal growth, including power supply system, electric control system, mechanical system, gas pressure control system, temperature measurement system, hot field loading system, which can realise automatic heating, temperature control, automatic pressure control, automatic warning and so on.

Heating power supply: 380V±10% 50Hz Rated power: 50KW

Heating method: induction heating Long crystal power: 18KW

Maximum temperature: 2500 ℃ Maximum frequency: 12-15KHz

Maximum pressure: 1 atmospheric pressure Long crystal temperature: 1800-2200 ° C

Cold limit vacuum: ≤10^ (-5) Pa (cold furnace) Vacuum chamber size: φ500 * 900 (D * H) mm

Protective atmosphere: high purity argon, nitrogen Suitable for seed crystal specifications: 6''-8''

Host size: about 600 * 700 * 2100 (L * W * H) mm

Temperature control mode: automatic temperature control PLC software                

Host weight: 400Kg Control mode: touch screen type

 KY Semiconductor Co., Ltd.  established in May 2018, is a technology research and development high-tech enterprise, focusing on semiconductor equipment research and development, substrate manufacturing, device design, technology transfer and transformation of scientific research achievements. Based in Harbin, KY Semiconductor has built an integrated park of production, education and research for scientific and technological research and development, equipment manufacturing and material production, and promoted the rapid development of the third-generation semiconductor materials and industry in China.  

Founded in May 2018 and located in Harbin New District,  KY Semiconductor Co., Ltd. is committed to building a new highland for the R&D and equipment manufacturing of third-generation semiconductor materials in Heilongjiang. The company focuses on the field of third-generation semiconductor silicon carbide, and is a leading manufacturer of silicon carbide substrate materials and a one-stop solution provider of silicon carbide crystal growth, mainly engaged in the research and development, production and sales of silicon carbide crystal series equipment and materials, silicon carbide substrates. Among them, silicon carbide substrates, seed wafers, and other silicon carbide crystal products are sold to silicon carbide epitaxy and device manufacturing enterprises, scientific research institutes and other customers; For silicon carbide manufacturers, it provides crystal growth furnaces and supporting equipment, crystal growth materials and related process services throughout the whole production line of silicon carbide crystal growth. The founder of the company, Zhao Lili, is a doctor of Max Planck Institute in Germany, and was a professor at Harbin Institute of Technology. Dr. Zhao Lili was selected into the "Ten Thousand Talents Program" of the Organization Department of the Central Committee of the People's Republic of China and a leading talent in scientific and technological innovation of the Ministry of Science and Technology. Enterprise qualifications include:

(1) High-tech enterprises (2) Provincial intellectual property advantage enterprises (demonstration category) (3) Provincial Engineering Technology Research Center, new R&D institutions (4) Specialized and special new small and medium-sized enterprises/innovative small and medium-sized enterprises (5) ISO 9001/14001/45001 system (6) IATF 16949 quality management system (7) 86 authorized patents, including 33 invention patents (8) Formulate 5 national standards, 2 SEMI standards, 3 enterprise standards (9) Heilongjiang Province Science and Technology First Prize, Second Prize (Zhao Lili) (10) Selected into the 2022 "Science and Technology China" Cutting-edge Enterprise List (2 in Heilongjiang) (11) Selected into the "Top 10 Chinese Substrates" list (Experts Say Aurora Award) (12) The equipment was selected as the provincial "first (set)" innovative product and passed CE certification.

          Before returning to China, Dr. Zhao Lili established a scientific research cooperation relationship with the world's top expert consultants, absorbed and digested the world's most advanced third-generation semiconductor silicon carbide crystal growth technology achievements at that time, established a crystal growth laboratory and broke through the international blockade to introduce the world's most advanced equipment (including technology), and then gradually realized domestic substitution and technology iteration through re-innovation and scientific research, and after more than 10 years of practice, formed a large-size and low-cost localization of silicon carbide substrate The whole industry chain independent preparation technology (including crystal growth equipment manufacturing, 6&8 inch crystal growth process, etc.) and apply for independent intellectual property rights.
The company has made breakthroughs in a series of key common technologies for crystal preparation, such as crimped single crystal growth technology, crystal defect and stress relief technology, raw material purification and sintering technology, seed crystal coating technology, tantalum carbide high-temperature evaporation technology, crystal annealing technology, etc., and has mastered a full range of process technologies. Among them, raw material purification and sintering technology, raw material recycling and reuse technology, seed crystal coating technology, and tantalum carbide high-temperature evaporation technology are unique technologies. It has broken through the key technologies of equipment such as vacuum chambers, sealing components, parameter analysis and precision control of automatic procedures, and developed the largest 8-inch induction heating and resistance heating SiC crystal growth equipment, becoming the only enterprise in China that has two kinds of crystal growth furnaces at the same time. On the basis of self-developed equipment, the first 8-inch SiC crystal and substrate based on resistive equipment in China will be prepared in 2022.
In February 2023, the Chinese Institute of Electronics organized a scientific and technological achievement appraisal meeting, and the expert committee headed by Academician Hao Yue evaluated that "the research and development of 8-inch equipment and process technology is difficult, the results are innovative, with independent intellectual property rights, and the technical level is leading in China and advanced in the world". The company's patents cover the structural design of the crystal growth furnace, the structural design of the thermal field, the key crystal growth process, etc., forming a relatively complete patent tree.

KY Semiconductor has built a third-generation semiconductor industry-university-research gathering area integrating production, learning and research in Harbin New Area, and is committed to becoming one of the key material suppliers of third-generation semiconductors. The third-generation semiconductor industry-university-research gathering area will start equipment paving in August 2022, and 120 sets of growth furnaces will be formed by the end of the year, and the growth furnace will be laid and put into production; In September 2023, the substrate processing production line will be laid, with an annual output of 50,000 pieces of silicon carbide substrates, and the pilot line of 8-inch silicon carbide substrates will be completed, and the first batch of self-produced 8-inch silicon carbide substrates will be prepared. The annual production capacity of the equipment is 400 units. In 2024, it is planned to add 300 long crystal furnaces and supporting substrate processing production lines to the new plant, and the annual production capacity is expected to increase to 200,000 substrates (including 8 inches).