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Product information
Application
8 inch SiC ETCH, compatible with 6 inch, Suitable for GaN, TCV, TGV process
Compatible with TSV,DRiE and other processes
Benifit
1.Higher etching rate,higher throughput
Dual RF source maximum 5KW 13.56MHz
Bias RF maximum 3KW 13.56MHz or 400KHz
Short Gap design, improve plasma density
2.Better Uniformity
Patented dual plasma source design with independently controlled inner and outer RF power
Specially designed with the flow channel.Characterized by a more uniform plasma distribution
Multi layer cooling pans and dual zone He coiling desigh improve temperature distribution
3.Suitable for warpage wafers
EPR(Edge protecting ring) desigh for warpage wafers
EPR prevents wafer edge etched during Deep Si Ethcing process
4. Easy maintenance, low CoC
Heated chamber wall and shield ring(140 ℃ Max) prevent by-product deposition and improve MTBC
Plasma dry clean mode supported, improve yield and MTBC
Less consumable parts, low cost
Compact design,easy maintenance
Processing Performance
Etching rate:> 1.3um / min
WIW Uniformity: ≤3%
Particle add-on: <50ea
Selectivity (to Si02):> 14:1
Good profile performance
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