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sunyuchen@sumec.com.cn
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SiC Etching process
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China
Main Products:
Plasma processing equipment
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Product information

Application
8 inch SiC ETCH, compatible with 6 inch, Suitable for GaN, TCV, TGV process
Compatible with TSV,DRiE and other processes

Benifit
1.Higher etching rate,higher throughput
Dual RF source maximum 5KW 13.56MHz 
Bias RF maximum 3KW 13.56MHz or 400KHz 
Short Gap design, improve plasma density

2.Better Uniformity
Patented dual plasma source design with independently controlled inner and outer RF power
Specially designed with the flow channel.Characterized by a more uniform plasma distribution
Multi layer cooling pans and dual zone He coiling desigh improve temperature distribution

3.Suitable for warpage wafers
EPR(Edge protecting ring) desigh for warpage wafers
EPR prevents wafer edge etched during Deep Si Ethcing process

4. Easy maintenance, low CoC 
Heated chamber wall and shield ring(140 ℃ Max) prevent by-product deposition and improve MTBC
Plasma dry clean mode supported, improve yield and MTBC
Less consumable parts, low cost
Compact design,easy maintenance

Processing Performance
Etching rate:> 1.3um / min 
WIW Uniformity: ≤3% 
Particle add-on: <50ea 
Selectivity (to Si02):> 14:1
Good profile performance 

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