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+86 25-84532303
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sunyuchen@sumec.com.cn
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ICP Chemical Vapor Deposition, ICPCVD
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SYSKEY
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SYSKEY
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Taiwan, China
Main Products:
Sputter, E-Beam, Thermal Evaporator, ALD, PEALD, RIE, PECVD, and LPCVD
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Product information

he inductively coupled plasma enhanced chemical vapor deposition (ICPVD) system utilizes an ICP coil to highly ionize the reaction gas, allowing CVD to achieve the deposition of some special materials at high temperatures. This product needs to be customized according to the user's application requirements. Currently, the customized product has successfully prepared upright growth graphene, and the growth state of the material can be controlled through the process. This graphene has a wide range of applications in catalysis and field emission fields.
 

Technical parameters:
1. Substrate size 2-6 inches;
2. The maximum heating temperature is 900 ℃;
3. Up to 6 process gases can be expanded;
4. Optional fast sample transfer chamber;

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