Search
Post Requirements
Post Requirements
Product information
Thermal evaporation sources are designed for evaporating different elements and compounds, such as III/V MBE systems. Typical evaporation materials include Ga, In, Al, Si, Be, Cu, Au, etc. We need to use different source furnaces for different materials.
Medium temperature beam source furnace WEZ
-Temperature range: 700 ℃~1400 ℃
-Crucible capacity: 2-200 cc
-Standard filament, cold lip, hot lip, dual filament of various types
Low temperature beam source furnace NTEZ
-Temperature range: 80 ℃~1000 ℃
-Crucible capacity: 2-200 cc
-Standard filament, cold lip, hot lip, dual filament of various types
High temperature beam source furnace HTEZ/HTS
-Temperature range:~2000 ℃
-Crucible capacity: 1.5~35 cc
-Self supporting W wire heating, pyrolytic graphite heating wire
Large capacity beam source furnace PEZ
-Temperature range: 200 ℃~1400 ℃
-Crucible capacity: 40-1700 cc
-Standard filament, cold lip, hot lip, dual filament of various types
Organic matter beam source furnace OME
-Temperature range: 15 ℃~300 ℃
-Crucible capacity: 2-35 cc
-Temperature stability:<± 0.02 ℃
Oxygen resistant beam source furnace OREZ
-Temperature range: 200 ℃~1200 ℃
-Crucible capacity: 10~125 cc
-Standard filament, cold lip, hot lip, dual filament of various types
-Heating wires and shielding components are made of oxygen resistant materials
Phosphorus doped source DECO
-High purity P2 is produced through GaP cracking, which is easy to operate and safe
-Crucible capacity: 10~420 cc
-Working temperature: 900 ℃~1200 ℃
Silicon Shenghua Source SUSI
-Working temperature:~1400 ℃
-Ultra pure silicon heating wire and silicon shielding component, with a beam control accuracy of up to 0.1A/s
-Used for growing ultra-thin Si thin films, high-purity Si doping, III-V group doping, GaAs doping
Carbon Upgrade Huayuan SUKO
-Working temperature:~2300 ℃
-High purity PG heating wire
-Used for high-purity C doping, III-V group doping, and graphene research
Thermal cracking source TCC
-Temperature range:~1300 ℃
-Crucible capacity: 35, 130 cc
-Three temperature zone design
-Used for growing Te, Sb, Se, As, Mg
Click to view more 'Product Categories'
Direct to specific products: Molecular Beam Epitaxy (MBE), Pulsed Laser Deposition (PLD), Reflective High Energy Electron Diffraction (RHEED), Evaporation Source, Ion Source, Electron Gun
![[Second-hand] laser](https://cdn.sumecdtx.com/equipment/20230818/928f9346aceb42e3b60670c380399f59.jpg)
