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Reflective High Energy electron diffractometer (RHEED)
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Main Products:
Molecular beam epitaxy system (MBE), pulsed laser deposition system (PLD), reflective high energy electron diffractometer (RHEED), evaporation source, electron gun, ion gun, etc
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Product information

STAIB SYSTEMS is one of the world's leading suppliers of high-performance surface analysis instruments. Our Reflection High Energy Electron Diffraction (RHEED) and Differential Reflection High Energy Electron Diffraction (TorrRHEED) instruments are widely used for in-situ monitoring of various thin film growth. Our products are adopted by major vacuum coating equipment manufacturers around the world, such as Omicron in Germany, Riber in France, TSST in the Netherlands, and have been unanimously recognized by major domestic and foreign enterprises and research institutes!

 

The widespread application of reflective high-energy electron diffraction is related to the development of molecular beam epitaxy (MBE) technology. It can be used to observe the growth of epitaxial thin films in situ, providing a basis for improving growth conditions. Reflection high-energy diffraction has a high surface sensitivity (10-40 angstroms), but it is not limited to single crystal surface structure analysis, but can also be used for surface structure analysis of polycrystalline, twin, amorphous surfaces, and particulate samples. It can also be used for crop identification, determination of crystal orientation and atomic position. In addition, electron diffraction can be used to determine the space group of crystals.

 

RHEED features:

Energy range of electron gun: 10 keV~60 keV

Working pressure range: from UHV to 1 × 10-5 mbar

High performance electron gun: high brightness, small spots, low dispersion, extremely low gas release rate

Fluorescent screen: aluminum plated protective coating

Remote control: realizing the functions of electron beam focusing, deflection, and electron gate

Electron beam deflection angle: ± 15 °

Optional: First stage differential, working pressure can reach 10-3 Torr

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Direct to specific products: Molecular Beam Epitaxy (MBE), Pulsed Laser Deposition (PLD), Reflective High Energy Electron Diffraction (RHEED), Evaporation Source, Ion Source, Electron Gun

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