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Product information
The differential reflection high-energy electron diffractometer TorrRHEED is used in high-pressure active gas atmosphere thin film growth systems, such as PLD, MOMBE, CVD, etc. Due to the influence of high-pressure active gas atmosphere on the service life of RHEED filaments, as well as the effect of gas molecules on electron beam spot scattering and refraction on RHEED diffraction patterns. Therefore, the differential reflection high-energy electron diffractometer TorrRHEED was chosen.
It can be used to observe the growth of epitaxial thin films in situ, providing a basis for improving growth conditions. Reflection high-energy diffraction has a high surface sensitivity (10-40 angstroms), but it is not limited to single crystal surface structure analysis, but can also be used for surface structure analysis of polycrystalline, twin, amorphous surfaces, and particulate samples. It can also be used for crop identification, determination of crystal orientation and atomic position. In addition, electron diffraction can be used to determine the space group of crystals.
RHEED features:
Energy range of electron gun: 30keV~50keV
Working pressure range: first stage differential 10mTorr, second stage differential 100mTorr
High performance electron gun: high brightness, small spots, low dispersion, extremely low gas release rate
Fluorescent screen: aluminum plated protective coating
Remote control: realizing the functions of electron beam focusing, deflection, and electron gate
Electron beam deflection angle: ± 15 °
Click to view more ‘Product Categories’
Direct to specific products: Molecular Beam Epitaxy (MBE), Pulsed Laser Deposition (PLD), Reflective High Energy Electron Diffraction (RHEED), Evaporation Source, Ion Source, Electron Gun
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