Sumec menuSumec menu

SUMEC TOUCH WORLD

Global Trading Service Platform for Machinery

search Search
Image
中文
Image
+86 25-84532303
Image
sunyuchen@sumec.com.cn
1 / 1
OCTOPLUS 500
iconicon
Post RequirementsPost Requirements
BE-instruments
BE-instruments icon
View more
Post RequirementsPost Requirements
BE-instruments
BE-instruments icon
China
Main Products:
Molecular beam epitaxy system (MBE), pulsed laser deposition system (PLD), reflective high energy electron diffractometer (RHEED), evaporation source, electron gun, ion gun, etc
icon

Product information

Based on the many years of research and development experience of our team members, we have developed and manufactured molecular beam epitaxy systems (MBE), OCTOPLUS 500 MBE systems and source furnaces with various functions. Each product is assembled and tested by MBE professionals.

The OCTOPLUS 500 MBE system has been developed to grow high quality Group III/V or Group II-VI heterogeneous structural materials on 6-inch substrates. Pyrolytic graphite heating or tungsten, tantalum heating wire is selected for the sample table. The OCTOPLUS 500 MBE system is well suited for the development and production of Group III/V, Group II/VI or other heterogeneous materials growth applications.

The main features of the OCTOPLUS 500 MBE system are extremely high reliability and universality. The standard Octoplus 500 has 11 radially distributed source holes, and 3 additional source holes can be selected as required. The rapid vacuum sampling chamber is equipped with a horizontal magnetic rod transmission system, which can easily transfer samples without destroying the vacuum of the MBE chamber.

 

Chamber size: 550 mm ID, liquid nitrogen cold screen (compatible with water cooling)

Background vacuum: < 5 × 10-11 mbar

Sample size: up to 4 inches, downward compatible with small size samples

Heater: SiC, W and other types of optional, the highest temperature up to 1500 ℃

Source furnace flange: 12 × DN63CF

Application: III-V, II-VI

 

Main parameters of OCTOPLUS 500 MBE system:

● ID 550 mm

● Applied to Group III/V, Group II/VI or other heterogeneous materials

● Maximum 6-inch wafer, or 7x2 inch wafer

● Sample chamber and buffer chamber

● Linear sample transfer system

● Number of standard flange holes (standard 11, can be increased by 3)

● Beam source, gas source, sample station

● Vacuum system (ion adsorption pump, molecular pump, cryogenic pump, etc.)

● In situ characterization ability

● Software/hardware control system

● Additional requirements can be customized

We are happy to discuss the parameters of MBE together and give reasonable suggestions accordingly. If you have questions or need detailed specifications, please contact our sales department.

If you have any equipment requirements or technical inquiries, please feel free to contact us

For more information, click on the "Product categories ‍" ‍

Direct to specific products molecular beam epitaxy system (MBE), pulsed laser deposition system (PLD), reflective High energy electron diffractometer (RHEED), evaporation source, ion source ‍, electron gun


 

All products in the store
Molecular beam ‍ epitaxial system MBEAll products in the store
精密电子束焊接设备All products in the store
Precision vacuum laser welding equipment seriesAll products in the store
超高真空纳米颗粒源All products in the store
Ultra-high vacuum radio frequency atom sourceAll products in the store
OCTOPLUS 500 EBVAll products in the store