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Product information
Molecular Beam Epitaxy System (MBE) OCTOPLUS 500 EBV MBE system was developed to grow high quality Si/SiGe material on a 4 inch Si substrate. It can also be upgraded to a 6 inch sample. The cavity can also be loaded with 2 electron beam evaporation and 8 beam sources or loaded with gas ejection, or surface treatment.
Chamber size: 550 mm ID, liquid nitrogen cold screen (compatible with water cooling)
Background vacuum: < 5 × 10-11 mbar
Sample size: up to 4 inches, downward compatible with small size samples
Heater: SiC, W and other types of optional, the highest temperature up to 1500 ℃
Source furnace flange: 8 × DN63CF, 2 × DN250CF
Applications: SiGe, metals, oxides, 2D materials, topological superconducting materials, etc
MBE systems with SiGe and other materials equipped with beam source and electron beam evaporation source
● Ideal for Si/SiGe epitaxial growth or metal deposition
● The substrate can be 3,4 or 6 inches
● 2 large capacity electron gun source holes
● 8 beam source or gas source holes
● In situ characterization ability
● Easy to use and maintain
● Clean room assembly and testing
● Strong support team of MBE PhD experts
The electron beam produced by the electron gun can be detected by a four-stage mass spectrometer. Pyrolytic graphite heating or tungsten, tantalum heating wire is selected for the sample table. The OCTOPLUS 500 EBV MBE system is well recognized for the development and production of metal, magnetic, oxide, topological insulation and Si/SiGe heterogeneous structural materials growth applications.
The standard OCTOPLUS 500 EBV MBE has 10 radially distributed source holes, and we recommend 8 source holes for beam sources, sublimation sources, or related components. Two DN250CF large source holes are used for the electron beam evaporation gun, which can also be a porous electron gun -EBVM. The rapid vacuum sampling chamber is equipped with a horizontal magnetic rod transmission system, which can easily transfer samples without destroying the vacuum of the MBE chamber. RHEED systems can be equipped to monitor film growth in situ.
For more information, click on the "Product categories "
Direct to specific products molecular beam epitaxy system (MBE), pulsed laser deposition system (PLD), reflective High energy electron diffractometer (RHEED), evaporation source, ion source , electron gun
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