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SiC Wafer Defect Inspection System
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Product information

The E3500 is a defect inspection equipment specifically designed for SiC wafers. It can inspect surface and fluorescent defects in SiC substrates and epitaxial wafers. This equipment can identify and differentiate between defects such as triangle, carrot, downfall, micropipe, SF (stacking fault), and BPD (basal plane dislocation). It supports inspection of 4", 6", and 8" wafers, offering high throughput and high inspection accuracy.

Wafer Size
Size: 4", 6", 8" compatible;
2 cassettes; other sizes upon requests
Thickness:350um~1500um(Other thicknesses need to be tested)
Defect Inspection Capability
 SiC Substrate:Particle、Scratch、pit、bump、stain、Micro Pipe、KOH Etch Mapping、SF
SiC Epi:Particle、Scratch、pit、bump、Carrot&Surface Triangle、Downfall、KOH Etch Mapping、SF,BPD
*It can identify pits and bumps as small as 0.18µm.

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